LK2960 Insulated gate bipolar transistor IGBT Toshiba MG200J2YS45 DFS60E-S1EA01024 High reliability: Developed in order

High reliability: Developed in order to function stable in demanding industrial environments

tested and ready for immediate use

The RJ155 board Ferag 526

Simple installation: The design enables uncomplicated assembly and commissioning

Versatile application: The display is suitable for various industrial applications

LK2960 Insulated gate bipolar transistor IGBT Toshiba MG200J2YS45 DFS60E-S1EA01024 High reliability: Developed in orderThe LK2960 Insulated Gate Bipolar Transistor (IGBT) from Toshiba, Model MG200J2YS45, is an excellent choice for industrial applications that require reliable performance and efficiency. This IGBT used comes from a device dismantling and was in operation until it was expanded, which underlines its quality and functionality. High performance: Designed for high electricity and voltage applications, this IGBT offers optimal performance parameters.